Time-dependent dielectric breakdown of hydrogenated silicon carbon nitride thin films under the influence of copper ions

Applied Physics Letters

Volumn 84, Issue 14, 2004, Pages 2629-2631

  Cui, Hao ^a   Burke, Peter A ^a  

^a AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC BARRIERS; GATE ELECTRODES; TIME-DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

COPPER; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRODES; GATES (TRANSISTOR); HYDROGENATION; METALLIZING; MOS CAPACITORS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POSITIVE IONS; SILICON NITRIDE;

THIN FILMS;

EID: 2342521256     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1703839     Document Type: Article

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