Dielectric reliability studies of metal insulator metal capacitors (MIMCAP) with SiN dielectric under unipolar to bipolar AC-stress

IEEE International Integrated Reliability Workshop Final Report

Volumn 2003-January, Issue , 2003, Pages 86-90

  Schwab, R ^a   Allers, K H ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Breakdown voltage; Capacitors; Dielectrics and electrical insulation; Electric breakdown; Frequency; Leakage current; Metal insulator structures; Silicon compounds; Stress; Testing

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC INSULATION; ELECTRIC INSULATORS; LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; MIM DEVICES; MIS DEVICES; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON NITRIDE;

AC STRESS; BIPOLAR STRESS; DIELECTRIC AND ELECTRICAL INSULATION; FREQUENCY; INSULATOR STRUCTURE; METAL CAPACITORS; METAL INSULATOR METALS; METAL INSULATORS; METAL-INSULATOR STRUCTURE; STRESS AMPLITUDES;

ELECTRIC BREAKDOWN;

EID: 84947277195     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2003.1283306     Document Type: Conference Paper

References (4)

1. E. Rosenbaum, "High Frequency Time Dependent Breakdown of SiO2", IEEE Electron Device Letters, Vol 12, No. 6, 1991, p267.
2. T. Remmel et al., "Leakage Behaviour and Reliability Assessment of Tantalum Oxide MIM Capacitors", Integrated Reliability Physics Symposium 2003
3. K.-H. Allers, "Reliability of metal insulator metal capacitors", Proc. Advanced Metallization Conf. 2001, Montral; p447
4. B.Balland, G.Barbottin, "Trapping and Detrapping Kinetics Impact on C(V) and I(V) curves", published in "Instabilities in silicon devices", Vol. 2, editors G. Barbottin, A. Vapaille, Elsevier, 1989