Enhanced intraband carrier relaxation in quantum dots due to the effect of plasmon-LO-phonon density of states in doped heterostructures

Physical Review B - Condensed Matter and Materials Physics

Volumn 71, Issue 19, 2005, Pages

  Fedorov, A V ^a   Baranov, A V ^a   Rukhlenko, I D ^a   Gaponenko, S V ^b  

^a VAVILOV STATE OPTICAL INSTITUTE   (Russian Federation)

^b B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 28644446001     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.71.195310     Document Type: Article

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