Interferometric coherence measurement of stress-induced InxGa1-xAs/GaAs quantum dots at the resonant-luminescence phonon sideband

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 7, 2002, Pages 753261-753267

  Baranov, A V ^a,b   Davydov, V ^a,b   Ikezawa, M ^c   Ren, H W ^a   Sugou, S ^a,d   Masumoto, Yasuaki ^a,c  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b VAVILOV STATE OPTICAL INSTITUTE   (Russian Federation)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM;

ARTICLE; ELECTRONICS; ENERGY; EXCITATION; FILTRATION; MEASUREMENT; PHOTOLUMINESCENCE; POLARIMETRY; QUANTUM MECHANICS; STRESS;

EID: 0037104206     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.66.075326     Document Type: Article

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