New many-body mechanism of intraband carrier relaxation in quantum dots embedded in doped heterostructures

Solid State Communications

Volumn 128, Issue 6-7, 2003, Pages 219-223

  Fedorov, A V ^a   Baranov, A V ^a   Rukhlenko, I D ^a   Masumoto, Y ^b  

^a VAVILOV STATE OPTICAL INSTITUTE   (Russian Federation)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

A. Quantum dot; D. Intraband carrier relaxation; D. Surface plasmon LO phonon modes

Indexed keywords

HETEROJUNCTIONS; PHONONS; RELAXATION PROCESSES; SEMICONDUCTOR DOPING;

INTRABAND CARRIER RELAXATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0141954903     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2003.08.019     Document Type: Article

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