Phonon-enhanced intraband transitions in InAs self-assembled quantum dots

Journal of Luminescence

Volumn 87, Issue , 2000, Pages 503-505

  Baranov, A V ^a   Davydov, V ^a   Ren, H W ^a   Sugou, S ^a,b   Masumoto, Y ^a,c  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b NEC CORPORATION   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; ENERGY GAP; PHONONS; PHOTOLUMINESCENCE; RELAXATION PROCESSES; SEMICONDUCTING INDIUM COMPOUNDS;

CARRIER RELAXATION; SEMICONDUCTING INDIUM ARSENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033737077     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(99)00225-2     Document Type: Article

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