Impact ionization in strained Si devices

Journal of Applied Physics

Volumn 98, Issue 10, 2005, Pages

  Nicholas, G ^a   Grasby, T J ^a   Parker, E H C ^a   Whall, T E ^a   Skotnicki, T ^b  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

STRAIN-INDUCED BAND SPLITTING; STRAINED SI;

CARRIER MOBILITY; IMPACT IONIZATION; MOSFET DEVICES; SCATTERING;

SEMICONDUCTING SILICON;

EID: 28644440774     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2136210     Document Type: Article

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