Electroluminescence of Ge/SiGe p-MODFETs

Materials Science in Semiconductor Processing

Volumn 8, Issue 1-3 SPEC. ISS., 2005, Pages 377-382

  Richard, S ^a   Zerounian, N ^a   Cavassilas, N ^b   Hock G ^c   Hackbarth, T ^c   Herzog, H J ^c   Aniel, F ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b AIX MARSEILLE UNIVERSITÉ   (France)

^c DAIMLER AG   (Germany)

Author keywords

Electroluminescence; Full band energy structure; Impact ionization; p MODFET; Strained Ge on SiGe

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTROLUMINESCENCE; HAMILTONIANS; IMPACT IONIZATION; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MONOCHROMATORS; PROBABILITY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; TENSORS; THRESHOLD VOLTAGE;

CONDUCTION BAND (CB); FULL BAND ENERGY STRUCTURES; P-MODFET; STRAINED GE ON SIGE;

FIELD EFFECT TRANSISTORS;

EID: 13244254045     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.113     Document Type: Conference Paper

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