High performance 1.28 μm GaInNAs double quantum well lasers

Electronics Letters

Volumn 41, Issue 24, 2005, Pages 1328-1330

  Wei, Y Q ^a   Sadeghi, M ^a   Wang, S M ^a   Modh, P ^a   Larsson, A ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CURRENT DENSITY; GALLIUM COMPOUNDS; HIGH TEMPERATURE EFFECTS; LASER BEAMS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR QUANTUM WELLS;

GAAS BARRIERS; MODULATION BANDWIDTH; TEMPERATURE STABILITY; THRESHOLD CURRENT;

QUANTUM WELL LASERS;

EID: 28444484322     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20053210     Document Type: Article

References (11)

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4. Gollub, D., Moses, S., and Forchel, A.: ' 1.3 μm double quantum well GaInNAs distributed feedback laser diode with 13.8 GHz small signal modulation bandwidth ', Electron. Lett., 2004, 40, p. 1643-1644
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