9.7 GHz small-signal bandwidth of three-quantum well GaInNAs/GaAs laser diodes operating at 1.35 μm

Electronics Letters

Volumn 40, Issue 7, 2004, Pages 425-427

  Martinez, A ^a   Provost, J G ^b   Dagens, B ^b   Sallet, V ^a   Jahan, D ^a   Merghem, K ^a   Ferlazzo, L ^a   Landreau, J ^b   Le Gouezigou, O ^b   Harmand, J C ^a   Ramdane, A ^a  

^a Lab De Photonique Et De N   (France)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CRYSTAL ORIENTATION; ELECTRIC CURRENTS; LIGHT EMISSION; LIGHT MODULATION; MOLECULAR BEAM EPITAXY; NITRIDES; PLASMAS; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

RELATIVE INTENSITY NOISE; SEMICONDUCTING GALLIUM INDIUM NITRIDE ARSENIDE; SMALL SIGNAL BANDWIDTH; SOLID SOURCE MOLECULAR BEAM EPITAXY;

QUANTUM WELL LASERS;

EID: 11144357452     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20040305     Document Type: Article

References (10)

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