Growth and characterization of GaInNAs/GaAs multiquantum wells

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1422-1425

  Gilet, P ^a   Grenouillet, L ^b   Duvaut, P ^a   Ballet, P ^a   Rolland, G ^a   Vannuffel, C ^a   Million, A ^a  

^a CEA LETI   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; MONOCHROMATORS; OPTICAL PROPERTIES; PYROMETALLURGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SPECTROSCOPY; TEMPERATURE; THERMOCOUPLES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

FULL WIDTH AT HALF MAXIMUM; GAS MOLECULAR BEAM EPITAXY; HIGH RESOLUTION X-RAY ROCKING CURVES; ROOM TEMPERATURE PHOTOLUMINESCENCE MEASUREMENTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035535278     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1374620     Document Type: Conference Paper

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