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Volumn 87, Issue 3, 2000, Pages 1369-1373

Carrier depletion by defects levels in relaxed In0.2Ga0.8As/GaAs quantum-well Schottky diodes

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[No Author keywords available]

Indexed keywords


EID: 0347055385     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.372022     Document Type: Article
Times cited : (11)

References (20)
  • 3
    • 84859538906 scopus 로고
    • R. People and J. C. Bean. Appl. Phys. Lett. 47, 322 (1985); 49, 229 (1986)
    • (1986) Appl. Phys. Lett. , vol.49 , pp. 229


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.