Investigations of AlGaN/GaN field-effect transistor structures by photoreflectance spectroscopy

Microelectronics Journal

Volumn 36, Issue 3-6, 2005, Pages 442-445

  Misiewicz, J ^a   Kudrawiec, R ^a   Syperek, M ^a   Paszkiewicz, R ^a   Paszkiewicz, B ^a   Tlaczala M ^a  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

AlGaN GaN; GaN; HFET; Interface; Photoreflectance

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRIC FIELDS; GALLIUM NITRIDE; HETEROJUNCTIONS; INTERFACES (MATERIALS); REFLECTION; RESONANCE;

FRANZ-KELDYSH OSCILLATIONS (FKOS); HFET; PHOTOREFLECTANCE;

FIELD EFFECT TRANSISTORS;

EID: 28344445250     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2005.02.042     Document Type: Conference Paper

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