Photoreflectance studies of (Al)Ga- and N-face AlGaN/GaN heterostructures

Thin Solid Films

Volumn 450, Issue 1, 2004, Pages 155-158

  Buchheim, C ^a   Winzer, A T ^a   Goldhahn, R ^a   Gobsch, G ^a   Ambacher, O ^a   Link, A ^b   Eickhoff, M ^b   Stutzmann, M ^b  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

GaN; Heterostructure; Photoreflectance; Polarization; Surface states

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; ELECTRON GAS; LIGHT POLARIZATION; LIGHT REFLECTION; MICROSCOPIC EXAMINATION; OSCILLATIONS; PIEZOELECTRIC MATERIALS; SCHOTTKY BARRIER DIODES; SURFACE PHENOMENA; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

PHOTOREFLECTANCE; SURFACE STATES;

HETEROJUNCTIONS;

EID: 1142303860     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.10.062     Document Type: Conference Paper

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