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Volumn 230, Issue 3-4, 2001, Pages 590-595
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Impedance spectroscopy analysis of AlGaN/GaN HFET structures
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Author keywords
A1. Characterization; A3. Metalogranic vapor phase epitaxy; B1. Nitrides; B3. Field effect transistors
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Indexed keywords
CARRIER CONCENTRATION;
CURRENT VOLTAGE CHARACTERISTICS;
DEPOSITION;
HETEROJUNCTIONS;
METALLORGANIC VAPOR PHASE EPITAXY;
SAPPHIRE;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SPECTROSCOPY;
HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET);
IMPEDANCE SPECTROSCOPY;
FIELD EFFECT TRANSISTORS;
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EID: 0035451728
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)01265-9 Document Type: Article |
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Times cited : (26)
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References (6)
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