Growth of high quality GaN and AlxGa1-xN layers by MOVPE technique

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3725, Issue , 1999, Pages 21-24

  Paszkiewicz, R ^a   Korbutowicz, R ^a   Radziewicz, D ^a   Panek, M ^a   Paszkiewicz, B ^a   Kozlowski, J ^a   Boratynski, J ^a   Tlaczala, M ^a  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; OPTICAL MICROSCOPY; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

CURRENT VOLTAGE MEASUREMENT; GALLIUM NITRIDE;

HETEROJUNCTIONS;

EID: 0032651998     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (7)