In situ hole doping of wide-gap semiconductors by dual-target simultaneous laser ablation: GaN and SiC epitaxial films

Applied Physics Letters

Volumn 87, Issue 16, 2005, Pages 1-3

  Muto, Hachizo ^a   Asano, Takashi ^a   Wang, Rong Ping ^a   Kusumori, Takeshi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; EPITAXIAL GROWTH; SILICON CARBIDE;

LASER ABLATION DEPOSITION; TARGET-ROTATION; WIDE-BAND-GAP SEMICONDUCTORS;

SEMICONDUCTOR MATERIALS;

EID: 28344444038     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2105989     Document Type: Article

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