|
Volumn 389-393, Issue 1, 2002, Pages 371-374
|
Fabrication of α-SiC heteroepitaxial films by YAG-PLAD method
|
Author keywords
Heteroepitaxial film; Pulsed laser ablation; RHEED; X ray diffraction; SiC
|
Indexed keywords
EPITAXIAL GROWTH;
HARMONIC ANALYSIS;
LASER ABLATION;
LOW TEMPERATURE EFFECTS;
PULSED LASER DEPOSITION;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SAPPHIRE;
SILICON CARBIDE;
SILICON WAFERS;
X RAY DIFFRACTION;
ABLATION;
FILM PREPARATION;
NEODYMIUM LASERS;
PULSED LASERS;
YTTRIUM ALUMINUM GARNET;
CRYSTALLINE FILMS;
HETEROEPITAXIAL FILMS;
PULSED LASER ABLATION;
SUBSTRATE PLANES;
LOW TEMPERATURES;
ND : YAG LASERS;
ORIENTED FILMS;
PREPARATION TECHNIQUE;
PULSED LASER ABLATION DEPOSITIONS;
SI(111) SUBSTRATE;
EPITAXIAL FILMS;
SILICON CARBIDE;
|
EID: 0038009903
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.389-393.371 Document Type: Article |
Times cited : (6)
|
References (11)
|