Impact of layer structure on performance of unpassivated AlGaN/GaN HEMT

Microelectronics Journal

Volumn 36, Issue 3-6, 2005, Pages 438-441

  Kordos P ^a,b   Bernat J ^c   Marso, M ^c  

^a SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^b INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

AlGaN GaN; Epitaxy; HEMT

Indexed keywords

ALUMINUM COMPOUNDS; DOPING (ADDITIVES); EPITAXIAL GROWTH; GALLIUM NITRIDE; GATES (TRANSISTOR); LEAKAGE CURRENTS;

ALGAN/GAN; LAYER STRUCTURES; MODULATION DOPING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 28344435611     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2005.02.040     Document Type: Conference Paper

References (13)

1. U.K. Mishra, P. Parikh, and Y. Wu AlGaN/GaN HEMTs - an overview of device operation and applications Proc. IEEE 90 2002 1022 1031
2. M.B. Green, K.K. Chu, E.M. Chumbes, J.A. Smart, J.R. Shealy, and L.F. Eastman The effect of surface passivation on microwave characteristics of undoped AlGaN/GaN HEMTs IEEE Electron Device Lett. 21 2000 268 270
3. 4 passivation on performance of AlGaN/GaN/Si HEMTs Electron. Lett. 39 2003 1155 1157
4. O. Mitrofanov, M. Manfra, and N. Weimann Impact of Si doping on radio frequency dispersion in unpassivated GaN/AlGaN/GaN high-electron-mobility transistors grown by plasma-assisted molecular-beam epitaxy Appl. Phys. Lett. 82 2003 4361 4363
5. J. Bernát, M. Wolter, A. Fox, M. Marso, J. Flynn, G. Brandes, and P. Kordoš Impact of layer structure on performance of unpassivated AlGaN/GaN/SiC HEMTs Electron Lett. 40 2004 78 79
6. L. Shen, R. Coffie, D. Buttari, S. Heikman, A. Chakraborty, A. Chini, S. Keller, S.P. DenBaars, and U.K. Mishra Unpassivated GaN/AlGaN/GaN Power High Electron Mobility Transistors with Dispersion Controlled by Epitaxial Layer Design J. Electron. Mater. 33 2004 422 425
7. E.J. Miller, E.T. Yu, P. Waltereit, and J.S. Speck Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy Appl. Phys. Lett. 84 2004 535 537
8. T. Hashizume, J. Kotani, and H. Hasegawa Leakage mechanism in GaN and AlGaN Schottky interfaces Appl. Phys. Lett. 84 2004 4884 4886
9. S. Heikman, S. Keller, Y. Wu, J.S. Speck, S.P. DenBaars, and U.K. Mishra Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures J. Appl. Phys. 93 2003 10114 10118
10. B. Jogai Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors J. Appl. Phys. 93 2003 1631 1635
11. E.T. Yu, X.Z. Dang, L.S. Yu, D. Qiao, P.M. Asbeck, S.S. Lau, G.J. Sullivan, K.S. Boutros, and J.M. Redwing Schottky barrier engineering in III-V nitrides via the piezoelectric effect Appl. Phys. Lett. 73 1998 1880 1882
12. J. Bernát, P. Javorka, M. Marso, and P. Kordoš Conductivity and Hall effect measurements on intentionally undoped and doped AlGaN/GaN heterostructures before and after passivation App. Phys. Lett. 83 2003 5455 5457
13. M. Marso, J. Bernát, P. Javorka, and P. Kordoš Influence of a carrier supply layer on carrier density and drift mobility of AlGaN/GaN/SiC high electron mobility transistors Appl. Phys. Lett. 84 2004 2928 2930