Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design

Journal of Electronic Materials

Volumn 33, Issue 5, 2004, Pages 422-425

  Shen, L ^a   Coffie, R ^a   Buttari, D ^a   Heikman, S ^a   Chakraborty, A ^a   Chini, A ^a   Keller, S ^a   Denbaars, S P ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

GaN AlGaN GaN; HEMTs; Microwave power field effect transistor; Modulation doped field effect transistor (MODFET); Passivation; Radio frequency dispersion

Indexed keywords

DISPERSIONS; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; PASSIVATION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SILICON NITRIDE;

GAN/ALGAN/GAN; MICROWAVE-POWER FIELD-EFFECT TRANSISTORS; MODULATION-DOPED FIELD-EFFECT TRANSISTORS (MODFET); RADIO-FREQUENCY DISPERSIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 2442539313     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0195-6     Document Type: Conference Paper

References (11)

1. U.K. Mishra, P. Parikh, and Y.-F. Wu, Proc. IEEE 90, 1022 (2002).
2. S.C. Binari, K. Ikossi, J.A. Roussos, W. Kruppa, D. Park, H.B. Dietrich, D.D. Koleske, A.E. Wickenden, and R.L. Henry, IEEE Trans. Electron Dev. 48, 465 (2001).
3. R. Vetury, N.Q. Zhang, S. Keller, and U.K. Mishra, IEEE Trans. Electron Dev. 48, 560 (2001).
4. B.M. Green, K.K. Chu, E.M. Chumbes, J.A. Smart, J.R. Shealy, and L.F. Eastman, IEEE Electron Dev. Lett. 21, 268 (2000).
5. R. Coffie, D. Buttari, S. Heikman, S. Keller, A. Chini, L. Shen, and U.K. Mishra, IEEE Electron Dev. Lett. 23, 588 (2002).
6. A. Jimenez et al., IEEE Electron Dev. Lett. 23, 306 (2002).
7. M.B. Das, Proc. IEEE 113, 1565 (1966).
8. S. Heikman, S. Keller, S.P. DenBaars, and U.K. Mishra, Appl. Phys. Lett. 81, 439 (2002).
9. P. Smorchkova et al., J. Appl. Phys. 90, 5196 (2001).
10. L. Shen, S. Heikman, B. Moran, R. Coffie, N.-Q. Zhang, D. Buttari, I.P. Smorchkova, S. Keller, S.P. DenBaars, and U.K. Mishra, IEEE Electron Dev. Lett. 22, 457 (2001).
11. D. Buttari et al., IEEE Electron Dev. Lett. 23, 118 (2002).