Plasma influence on the properties and structure of indium tin oxide films produced by reactive middle frequency pulsed magnetron sputtering

Thin Solid Films

Volumn 496, Issue 2, 2006, Pages 197-204

  Rogozin, A ^a   Vinnichenko, M ^a,b   Shevchenko, N ^a   Kolitsch, A ^a   Moller W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV   (Ukraine)

Author keywords

Electrical properties and measurements; Indium tin oxide; Optical properties; Plasma processing and deposition

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL BONDS; ELECTRIC CONDUCTIVITY; INDIUM COMPOUNDS; MAGNETRON SPUTTERING; NATURAL FREQUENCIES; OXYGEN; PLASMA FLOW; TIN COMPOUNDS;

ELECTRICAL PROPERTIES AND MEASUREMENTS; INDIUM TIN OXIDE; PLASMA PROCESSING AND DEPOSITION;

THIN FILMS;

EID: 28144457990     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.08.273     Document Type: Article

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