Effects of conditioning temperature on polishing pad for oxide chemical mechanical polishing process

Microelectronic Engineering

Volumn 82, Issue 3-4 SPEC. ISS., 2005, Pages 680-685

  Kim, Nam Hoon ^a   Choi, Gwon Woo ^a   Park, Jin Seong ^a   Seo, Yong Jin ^b   Lee, Woo Sun ^a  

^a Chosun University   (South Korea)

^b Daebul University   (South Korea)

Author keywords

Chemical mechanical polishing (CMP); Groove; Pad conditioning; Pore; Viscoelastic property

Indexed keywords

MICROPROCESSOR CHIPS; MORPHOLOGY; SILICA; SILICON WAFERS; THERMAL EFFECTS; VISCOELASTICITY;

GROOVE; PAD CONDITIONING; VISCOELASTIC PROPERTY;

CHEMICAL MECHANICAL POLISHING;

EID: 28044466208     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.07.080     Document Type: Conference Paper

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