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Volumn 227-228, Issue , 2001, Pages 571-576
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Substrate lattice constant effect on the miscibility gap of MBE grown InAsSb
a
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Author keywords
A1. Critical temperature; A1. Miscibility gap; A1. Phase separation; A1. Strain effect; A3. Molecular beam epitaxy
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Indexed keywords
COMPOSITION EFFECTS;
ENTHALPY;
ENTROPY;
LATTICE CONSTANTS;
MOLECULAR BEAM EPITAXY;
PHASE SEPARATION;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING GALLIUM ARSENIDE;
SOLUBILITY;
STRAIN;
SUBSTRATES;
X RAY DIFFRACTION ANALYSIS;
DELTA LATTICE PARAMETER MODEL;
MISCIBILITY GAP;
SEMICONDUCTING INDIUM COMPOUNDS;
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EID: 0035398723
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)00774-6 Document Type: Conference Paper |
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Times cited : (20)
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References (9)
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