Increased electron mobility of InAsSb channel heterostructures grown on GaAs substrates by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 2, 2000, Pages 746-750

  Kudo, Makoto ^a   Mishima, Tomoyoshi ^a   Tanaka, Takeshi ^b  

^a HITACHI LTD   (Japan)

^b HITACHI CABLE LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTAL LATTICES; INDIUM ALLOYS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

CHANNEL MATERIALS; LATTICE MATCHING;

HETEROJUNCTIONS;

EID: 0034155416     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591270     Document Type: Article

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