Highly manufacturable 4Gb DRAM using 0.11μm DRAM technology

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 353-356

  Jeong, H S ^a   Yang, W S ^a   Hwang, Y S ^a   Cho, C H ^a   Park, S ^a   Ahn, S J ^a   Chun, Y S ^a   Shin, S H ^a   Song, S H ^a   Lee, J Y ^a   Jang, S M ^a   Lee, C H ^a   Jeong, J H ^a   Cho, M H ^a   Lee, J K ^a   Kim, K ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GATES (TRANSISTOR); PHOTOLITHOGRAPHY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE;

THIN GATE OXIDES;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 0034448897     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)