Characteristics of silicon-based BaxSr1-xTiO3 thin films prepared by a sol-gel method

Journal of Physics D: Applied Physics

Volumn 35, Issue 9, 2002, Pages 923-926

  Ren, Tian Ling ^a   Wang, Xiao Ning ^a   Liu, Jian She ^a   Zhao, Hong Jin ^a   Shao, Tian Qi ^a   Liu, Li Tian ^a   Li, Zhi Jian ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BARIUM COMPOUNDS; CRYSTAL MICROSTRUCTURE; CURRENT DENSITY; FILM PREPARATION; LEAKAGE CURRENTS; PERMITTIVITY; RAPID THERMAL ANNEALING; SOL-GELS; X RAY DIFFRACTION ANALYSIS;

BARIUM STRONTIUM TITANATE; DIELECTRIC LOSS; LEAKAGE CURRENT DENSITY; PHASE STRUCTURE; SOL-GEL METHOD;

FERROELECTRIC THIN FILMS;

EID: 0037035462     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/35/9/314     Document Type: Article

References (6)

1. Alternative dielectrics to silicon dioxide for memory and logic devices
2. 3 (BST) thin films for Gigabit era DRAMs
3. A new silicon-based ferroelectric sandwich structure
4. Characteristics of the surface layer of barium strontium titanate thin films deposited by laser ablation
5. Processing and dielectric properties of sol-gel derived BST thin films
6. 3 thin films-based strontium-barium alkoxide derivatives