Preparation and study of stoichiometric ZnO by MOCVD technique

Journal of Crystal Growth

Volumn 285, Issue 4, 2005, Pages 521-526

  Wang, Xinsheng ^a   Yang, Tianpeng ^b   Du, Guotong ^a,b   Liang, Hongwei ^a   Chang, Yuchun ^a   Liu, Weifeng ^a   Xu, Yibin ^a  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^b JILIN UNIVERSITY   (China)

Author keywords

A1. Photoluminescence; A1. X ray diffraction; A1. X ray photoelectron; A3. Metalorganic molecular beam epitaxy; B1. Zinc compounds; B2. Semiconducting II VI materials

Indexed keywords

ELECTRONIC PROPERTIES; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; STOICHIOMETRY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

HALL MEASUREMENTS; PL SPECTRUM; ULTRAVIOLET EMISSION;

ZINC OXIDE;

EID: 28044434399     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.09.002     Document Type: Article

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