Coulomb explosion potential sputtering induced by slow highly charged ion impact

Applied Physics Letters

Volumn 87, Issue 22, 2005, Pages 1-3

  Tona, Masahide ^a,c   Takahashi, Satoshi ^a   Nagata, Kazuo ^a   Yoshiyasu, Nobuo ^a   Yamada, Chikashi ^a   Nakamura, Nobuyuki ^a   Ohtani, Shunsuke ^a   Sakurai, Makoto ^b  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

^b KOBE UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

IONS; MASS SPECTROMETRY; MATHEMATICAL MODELS; POTENTIAL ENERGY; SILICON; SUBSTRATES;

COLOUMB EXPLOSION; SECONDARY ION EMISSION; TIME-OF-FLIGHT MASS SPECTRA;

THIN FILMS;

EID: 27944490737     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2136361     Document Type: Article

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