Toward over unity proton sputtering yields from a hydrogen-terminated Si(111) 1×1 surface irradiated by slow highly charged Xe ions

Applied Physics Letters

Volumn 87, Issue 6, 2005, Pages

  Takahashi, Satoshi ^a   Tona, Masahide ^a,c   Nagata, Kazuo ^a   Nakamura, Nobuyuki ^a   Yoshiyasu, Nobuo ^a   Yamada, Chikashi ^a   Ohtani, Shunsuke ^a,c   Sakurai, Makoto ^b,c  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

^b KOBE UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB EXPLOSION-LIKE POTENTIAL; PROJECTILE CHARGE; PROTON SPUTTERING;

SILICON; XENON;

PROTONS;

EID: 23944482466     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2009829     Document Type: Article

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