메뉴 건너뛰기




Volumn 16, Issue 6, 1998, Pages 3294-3297

Masked ion beam lithography with highly charged ions

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001668565     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590367     Document Type: Article
Times cited : (37)

References (35)
  • 15
    • 0346975330 scopus 로고
    • VIth International Conference on the Physics of Highly Charged Ions, Manhattan, Kansas, 1992, edited by P. Richard, M. Stöckli, C. L. Cocke, and C. D. Lin, AIP, New York
    • R. W. Schmieder and R. J. Bastasz, in VIth International Conference on the Physics of Highly Charged Ions, Manhattan, Kansas, 1992, edited by P. Richard, M. Stöckli, C. L. Cocke, and C. D. Lin, AIP Conf. Proc. No. 274 (AIP, New York, 1993), p. 675.
    • (1993) AIP Conf. Proc. No. 274 , pp. 675
    • Schmieder, R.W.1    Bastasz, R.J.2
  • 31
    • 11744299326 scopus 로고
    • U.S. Patent No. 5,327,475 (Ruxam, Inc.)
    • K. S. Golovanivsky and E. M. Omeljanovsky, U.S. Patent No. 5,327,475 (Ruxam, Inc.) (1994).
    • (1994)
    • Golovanivsky, K.S.1    Omeljanovsky, E.M.2
  • 35
    • 11744255150 scopus 로고    scopus 로고
    • private communication
    • M. Stockli (private communication).
    • Stockli, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.