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Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 570-575

Fabrication and characterization of GaAs two-dimensional air-hole arrays on GaAs (1 1 1)A substrates using selective-area MOVPE

Author keywords

A1. (1 1 1)A substrates; A3. Selective area metalorganic vapor phase epitaxy (SA MOVPE); B2. Semiconducting gallium arsenide; B3. Two dimensional photonic crystals (2D PhCs)

Indexed keywords

CRYSTAL GROWTH; CRYSTALS; DIELECTRIC MATERIALS; ETCHING; LIGHT TRANSMISSION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL COMMUNICATION; OPTOELECTRONIC DEVICES; PARTIAL PRESSURE; SUBSTRATES;

EID: 9944220417     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.09.015     Document Type: Conference Paper
Times cited : (1)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.