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Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 570-575
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Fabrication and characterization of GaAs two-dimensional air-hole arrays on GaAs (1 1 1)A substrates using selective-area MOVPE
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Author keywords
A1. (1 1 1)A substrates; A3. Selective area metalorganic vapor phase epitaxy (SA MOVPE); B2. Semiconducting gallium arsenide; B3. Two dimensional photonic crystals (2D PhCs)
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Indexed keywords
CRYSTAL GROWTH;
CRYSTALS;
DIELECTRIC MATERIALS;
ETCHING;
LIGHT TRANSMISSION;
METALLORGANIC VAPOR PHASE EPITAXY;
OPTICAL COMMUNICATION;
OPTOELECTRONIC DEVICES;
PARTIAL PRESSURE;
SUBSTRATES;
AIR-HOLE ARRAY;
MODULATED DIELECTRIC STRUCTURE;
SELECTIVE AREA METALORGANIC VAPOR PHASE EPITAXY;
TWO-DIMENSIONAL PHOTONIC CRYSTALS (2D PHCS);
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 9944220417
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.09.015 Document Type: Conference Paper |
Times cited : (1)
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References (14)
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