Hexagonal facet laser with optical waveguides grown by flow-rate modulation epitaxy

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 719-724

  Ando, S ^a   Kobayashi, N ^a   Ando, H ^a   Horikoshi, Y ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; OPTICAL WAVEGUIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS;

FLOW-RATE MODULATION EPITAXY; HEXAGONAL FACET LASER;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030672730     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00521-0     Document Type: Article

References (11)

1. S.L. McCall, A.F.J. Levi, R.E. Slusher, S.J. Pearton and R.A. Logan, Appl. Phys. Lett. 60 (1992) 289.
2. S. Mitsugi, J. Kato, F. Koyama, A. Matsutani, T. Mukaihara and K. Iga, Jpn. J. Appl. Phys. 11B (1994) 6201.
3. S. Ando, N. Kobayashi and H. Ando, Jpn. J. Appl. Phys. 32 (1993) L1293.
4. S. Ando, N. Kobayashi and H. Ando, J. Crystal Growth 145 (1994) 302.
5. S. Ando, N. Kobayashi and H. Ando, Jpn. J. Appl. Phys. 34 (1995) L4.
6. N. Kobayashi, T. Makimoto and Y. Horikoshi, Jpn. J. Appl. Phys. 24 (1985) L962.
7. S. Ando and T. Fukui, J. Crystal Growth 98 (1989) 646.
8. D.K. Biegelsen, R.D. Bringans, J.E. Northrup and L.E. Swartz, Phys. Rev. Lett. 65 (1990) 452.
9. T. Nishida, K. Uwai, Y. Kobayashi and N. Kobayashi, Jpn. J. Appl. Phys. 34 (1995) 6326.
10. T.F. Kuech, M.S. Goorsky, M.A. Tischler, A. Palevski, P. Solomon, C.S. Tsai, J.A. Levens and K.J. Vahala, J. Crystal Growth 107 (1991) 116.
11. K. Shimoyama, Y. Inoue, K. Fujii and H. Gotoh, J. Crystal Growth 124 (1992) 235.