Enhanced hole mobilities in surface-channel strained-Si p-MOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 517-520

  Rim, K ^a   Welser, J ^a   Hoyt, J L ^a   Gibbons, J F ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; ELECTRON TRANSPORT PROPERTIES; EPITAXIAL GROWTH; GATES (TRANSISTOR); OXIDATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; STRAIN; TRANSCONDUCTANCE;

GATE OXIDES; HOLE MOBILITY ENHANCEMENT; SURFACE CHANNEL P-MOSFETS;

MOSFET DEVICES;

EID: 0029491314     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)