A new vertical GaN Schottky barrier diode with floating metal ring for high breakdown voltage

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn 16, Issue , 2004, Pages 319-322

  Lee, Seung Chul ^a   Her, Jin Cherl ^a   Kim, Soo Seong ^a   Ha, Min Woo ^a   Seo, Kwang Seok ^a   Choi, Yearn Ik ^b   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

^b Ajou University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACETONE; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; METHANOL; OPTIMIZATION; PARAMETER ESTIMATION; THERMAL CONDUCTIVITY;

FLOATING METAL RINGS (FMR); LATERAL STRUCTURES; LEAKAGE CURRRENT; TEMPERATURE ACTIVATION;

SCHOTTKY BARRIER DIODES;

EID: 4944261404     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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