Tunneling injection quantum-dot lasers with polarization-dependent photon-mediated carrier redistribution and gain narrowing

IEEE Journal of Quantum Electronics

Volumn 41, Issue 11, 2005, Pages 1369-1379

  Kim, Jungho ^a   Kondratko, Piotr Konrad ^a   Chuang, Shun Lien ^a   Walter, Gabriel ^a   Holonyak Jr , Nick ^a   Heller Jr , Richard Dean ^b,c   Zhang, Xuebing B ^b   Dupuis, Russell D ^b  

^a University of Illinois at Urbana Champaign   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

Gain; Quantum dot (QD); Quantum well (QW); Semiconductor lasers; Spontaneous emission; Stimulated emission

Indexed keywords

CHARGE CARRIERS; ELECTRON TRANSITIONS; ELECTRON TUNNELING; GROUND STATE; LIGHT EMISSION; LIGHT POLARIZATION; MATHEMATICAL MODELS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SPONTANEOUS EMISSION; STIMULATED EMISSION;

CARRIER REDISTRIBUTION; OPTICAL TRANSITION; TUNNELING INJECTION;

SEMICONDUCTOR LASERS;

EID: 27744495692     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2005.857067     Document Type: Article

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