Properties of InP self-assembled quantum dots embedded in In 0.49(Al xGa 1-x) 0.51P for visible light emitting laser applications grown by metalorganic chemical vapor deposition

Journal of Applied Physics

Volumn 91, Issue 8, 2002, Pages 5313-5320

  Ryou, J H ^a   Dupuis, R D ^a   Walter, G ^b   Holonyak, N ^b   Mathes, D T ^c   Hull, R ^c   Reddy, C V ^d   Narayanamurti, V ^d  

^a The University of Texas at Austin   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c University of Virginia   (United States)

^d HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT BAND GAP; GROWTH CONDITIONS; HIGH DENSITY; HIGH RESOLUTION; INP; LASER OPERATIONS; LASER STRUCTURES; LASING WAVELENGTH; MATRIX MATERIALS; P-MATRICES; ROOM TEMPERATURE; SELF ASSEMBLED QUANTUM DOTS; SELF-ASSEMBLED; VISIBLE LIGHT; VISIBLE SPECTRAL REGIONS;

ALUMINUM; ELECTRON MICROSCOPY; GROWTH (MATERIALS); LASER APPLICATIONS; LIGHT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PUMPING; OPTIMIZATION; VAPORS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037091496     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1454205     Document Type: Article

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