Gain saturation in InPGaInP quantum-dot lasers

Applied Physics Letters

Volumn 86, Issue 1, 2005, Pages

  Lutti, J ^a   Smowton, P M ^a   Lewis, G M ^a   Blood, P ^a   Krysa, A B ^b   Lin, J C ^b   Houston, P A ^b   Ramsay, A J ^b   Mowbray, D J ^b  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ATOMIC FORCE MICROSCOPY; FERMI LEVEL; GAIN CONTROL; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

ENERGY DISTRIBUTIONS; GAIN CURRENT; GAIN SATURATION; LASER STRUCTURES;

SEMICONDUCTOR LASERS;

EID: 19744383461     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1844600     Document Type: Article

References (10)

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