Effect of tensile strain/well-width combination on the measured gain-radiative current characteristics of 635 nm laser diodes

Applied Physics Letters

Volumn 82, Issue 10, 2003, Pages 1524-1526

  Lewis, G M ^a   Smowton, P M ^a   Blood, P ^a   Chow, W W ^b  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; GAIN MEASUREMENT; LIGHT POLARIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SENSITIVITY ANALYSIS; SPONTANEOUS EMISSION; STRAIN; TENSILE TESTING; TRANSPARENCY;

TENSILE STRAIN;

SEMICONDUCTOR LASERS;

EID: 0037429860     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1559658     Document Type: Article

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