Coupled strained-layer InGaAs quantum-well improvement of an InAs quantum dot AlGaAs-GaAs-InGaAs-InAs heterostructure laser

Applied Physics Letters

Volumn 79, Issue 27, 2001, Pages 4500-4502

  Chung, T ^a   Walter, G ^a   Holonyak, N ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035981043     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1430025     Document Type: Article

References (12)

1. N. Holonyak, Jr., R. M. Kolbas, R. D. Dupuis, and P. D. Dapkus, IEEE J. Quantum Electron. QE-16, 170 (1980).
2. D. Bimberg, N. N. Ledentsov, Zh. I. Alferov, P. S. Kop'ev, and V. M. Ustinov, IEEE J. Sel. Top. Quantum Electron. 3, 196 (1997).
3. G. Walter, N. Holonyak, J. H. Ryou, and R. D. Dupuis, Appl. Phys. Lett. 79, 1956 (2001).
4. S. L. Chuang and N. Holonyak, Jr. (unpublished).
5. L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, IEEE Photonics Technol. Lett. 11, 931 (1999).
6. G. T. Liu, A. Stintz, H. Li, T. C. Newell, A. L. Gray, P. M. Varangis, K. J. Malloy, and L. F. Lester, IEEE J. Quantum Electron. QE-36, 1272 (2000).
7. R. D. Dupuis, IEEE J. Sel. Top. Quantum Electron. 6, 1040 (2000).
8. S. A. Maranowski, A. R. Sugg, E. I. Chen, and N. Holonyak, Jr., Appl. Phys. Lett. 63, 1660 (1993).
9. J. M. Dallesasse, N. Holonyak, Jr., A. R. Sugg, T. A. Richard, and N. El-Zein, Appl. Phys. Lett. 57, 2844 (1990).
10. J. W. Mathews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974).
11. G. Park, O. B. Shchekin, D. L. Huffaker, and D. G. Deppe, IEEE Photonics Technol. Lett. 13, 230 (2000).
12. F. Heinrichsdorff, M.-H. Mao, N. Kirstaedter, A. Krost, D. Bimberg, A. O. Kosogov, and P. Werner, Appl. Phys. Lett. 71, 22 (1997).