Systematic study of thermal stability of AlGaN/GaN two-dimensional electron gas structure with SiN surface passivation

IEICE Electronics Express

Volumn 1, Issue 7, 2004, Pages 160-164

  Shiojima, Kenji ^a   Sugitani, Suehiro ^a   Shigekawa, Naoteru ^a  

^a NTT CORPORATION   (Japan)

Author keywords

AlGaN thickness dependence; AlGaN GaN heterostructure; sheet resistance; SiN surface passivation; thermal stability

Indexed keywords

EID: 27344452262     PISSN: 13492543     EISSN: None     Source Type: Journal    
DOI: 10.1587/elex.1.160     Document Type: Article

References (9)

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