Electrical and optical properties of p-GaN films implanted with transition metal impurities

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2520-2524

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Khanna, Rohit ^b   Pearton, S J ^b  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FERMI LEVEL; IMPURITIES; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING; THIN FILMS; TRANSITION METALS;

DEEP HOLE TRAPS; P-GAN FILMS; SERIES RESISTANCE; TRANSITION METAL IMPURITIES;

GALLIUM NITRIDE;

EID: 27344439810     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461271     Document Type: Conference Paper

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