Modeling of bias-field-dependent dielectric properties in ferroelectric thin films

Journal of Applied Physics

Volumn 98, Issue 7, 2005, Pages

  Wong, C K ^a   Tsang, C H ^a   Shin, F G ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS FIELDS; DIELECTRIC TUNABILITY; HYSTERESIS BEHAVIOR; MULTILAYER MODELS;

BARIUM COMPOUNDS; ELECTRIC CHARGE; FERROELECTRICITY; MAGNETIC FIELD EFFECTS; MAGNETIC HYSTERESIS; PERMITTIVITY; SATURATION (MATERIALS COMPOSITION);

THIN FILMS;

EID: 27144550754     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2060950     Document Type: Article

References (24)

1. M. O. Vieitez, S. I. Khartsev, and A. M. Grishin, Ferroelectric Thin Films XI Symposium, Boston, Dec. 2-5, 2002 (Materials Research Society, 2003), Vol. 748, p. 325.
2. T. Tohma, H. Masumoto, and T. Goto, Jpn. J. Appl. Phys., Part 1 42, 6969 (2003).
3. A. Jiang, M. Dawber, J. F. Scott, C. Wang, P. Migliorato, and M. Gregg, Jpn. J. Appl. Phys., Part 1 42, 6973 (2003).
4. R. G. Mendes, I. A. Santos, E. B. Araújo, and J. A. Eiras, Ferroelectrics 271, 1837 (2002).
5. S. L. Miller, J. R. Schwank, R. D. Nasby, and M. S. Rodgers, J. Appl. Phys. 70, 2849 (1991).
6. Y. T. Or, C. K. Wong, B. Ploss, and F. G. Shin, J. Appl. Phys. 93, 4112 (2003).
7. Y. T. Or, C. K. Wong, B. Ploss, and F. G. Shin, J. Appl. Phys. 94, 3319 (2003).
8. C. K. Wong and F. G. Shin, Appl. Phys. Lett. 86, 042901 (2005).
9. E. D. Torre, Magnetic Hysteresis (IEEE, New York, 1999), Chap..
10. B. Jiang, J. C. Lee, P. Zurcher, and R. E. Jones, Jr., Integr. Ferroelectr. 16, 805 (1997).
11. F. Preisach, Z. Phys. 94, 277 (1935).
12. G. Le Rhun, R. Bouregba, and G. Poullain, J. Appl. Phys. 96, 5712 (2004).
13. J. Lee, R. Ramesh, V. G. Keramidas, W. L. Warren, G. E. Pike, and J. T. Evans, Jr., Appl. Phys. Lett. 66, 1337 (1995).
14. V. C. Lo, J. Appl. Phys. 92, 6778 (2002).
15. W. Wu, K. H. Wong, and C. L. Choy, Appl. Phys. Lett. 85, 5013 (2004).
16. W. Wu, Y. Wang, G. K. H. Pang, K. H. Wong, and C. L. Choy, Appl. Phys. Lett. 85, 1583 (2004).
17. M. Grossmann, O. Lohse, D. Bolten, U. Boettger, T. Schneller, and R. Waser, J. Appl. Phys. 92, 2680 (2002).
18. W. L. Warren, G. E. Pike, B. A. Tuttle, and D. Dimos, Appl. Phys. Lett. 70, 2010 (1997).
19. E. G. Lee, D. J. Wouters, G. Willems, and H. E. Maes, Appl. Phys. Lett. 69, 1223 (1996).
20. B. H. Park, T. W. Noh, J. Lee, C. Y. Kim, and W. Jo, Appl. Phys. Lett. 70, 1101 (1997).
21. S. Okamura, S. Miyata, Y. Mizutami, T. Nishida, and T. Shiosaki, Jpn. J. Appl. Phys., Part 1 38, 5364 (1999).
22. C. Zhou and D. M. Newns, J. Appl. Phys. 82, 3081 (1997).
23. B. Chen, Appl. Phys. Lett. 84, 583 (2004).
24. M. Maleto, E. Pevtsov, A. Sigov, and A. Svotina, Ferroelectrics 286, 1023 (2003).