DC and RF characteristics of E-mode Ga0.51In0.49P-In0.15Ga0.85As pseudomorphic HEMTs

IEEE Electron Device Letters

Volumn 24, Issue 3, 2003, Pages 132-134

  Tu, Hsing Yuan ^a   Chou, Tao Hsuan ^a   Lin, Yo Sheng ^b   Chiu, Hsien Chin ^c   Chen, Ping Yu ^a   Wu, Wen Chung ^d   Lu, Shey Shi ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL CHI NAN UNIVERSITY   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^d Procomp Informatics Ltd   (Taiwan)

Author keywords

Enhancement mode; GaInP; Pseudomorphic HEMT (pHEMT); Single positive voltage supply

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); OSCILLATIONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TRANSCONDUCTANCE;

DRAIN SOURCE VOLTAGE; GALLIUM INDIUM PHOSPHIDE; GATE VOLTAGE; HIGH DRAIN SOURCE CURRENT; OSCILLATION FREQUENCY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0038714349     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.809045     Document Type: Letter

References (12)

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