Tunneling magnetoresistance in (Ga,Mn)As-based heterostructures with a GaAs barrier

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 966-969

  Chiba, D ^a   Matsukura, F ^b   Ohno, H ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

(GaMn)As; Spin polarization; Tunneling magnetoresistance

Indexed keywords

ANISOTROPY; APPROXIMATION THEORY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; FERMI LEVEL; FERROMAGNETIC MATERIALS; INTERFACES (MATERIALS); MAGNETIZATION; MAGNETORESISTANCE; SEMICONDUCTING GALLIUM ARSENIDE;

(GAMN)AS; SPIN POLARIZATION; TUNNELING MAGNETORESISTANCE (TMR);

HETEROJUNCTIONS;

EID: 1642325465     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.172     Document Type: Conference Paper

References (27)

1. Miyazaki T., Tezuka N. J. Magn. Magn. Mater. 139:1995;L231.
2. Moodera J.S., Kinder L.R., Wong T.M., Meservey R. Phys. Rev. Lett. 74:1995;3273.
3. Wolf S., Awschalom D.D., Buhman R.A., Daughton J.M., von Molnár S., Roules M.L., Chtchelkanova A.Y., Treger D.M. Science. 294:2001;1488.
4. H. Ohno, F. Matsukura, Y. Ohno, JSAP International, No. 5, 2002, pp. 4-13, available at http://www.jsapi.jsap.or.jp/ .
5. F. Matsukura, H. Ohno, T. Dietl, in: K.H.J. Buschow (Ed.), Handbook of Magnetic Materials, Vol. 14, North-Holland, Amsterdam, 2002, pp. 1-87.
6. Ohno H., Matsukura F., Ohno Y. Solid State Commun. 119:2001;281.
7. Tanaka M., Higo Y. Phys. Rev. Lett. 87:2001;292.
8. Higo Y., Shimizu H., Tanaka M. J. Appl. Phys. Lett. 89:2001;6745.
9. Ohno H. Science. 281:1998;951.
10. Takamura K., Matsukura F., Chiba D., Ohno H. Appl. Phys. Lett. 81:2002;2590.
11. Ohno Y., Arata I., Matsukura F., Ohno H. Physica E. 13:2002;521.
12. Chiba D., Akiba N., Matsukura F., Ohno Y., Ohno H. Appl. Phys. Lett. 77:2000;1873.
13. Matsukura F., Shen A., Sugawara Y., Omiya T., Ohno Y., Ohno H. Inst. Phys. Conf. Ser. 162:1999;547 Ohno H., Matsukura F., Ohno Y. Solid State Commun. 119:2001;281.
14. Matsukura F., Shen A., Sugawara Y., Omiya T., Ohno Y., Ohno H. Inst. Phys. Conf. Ser. 162:1999;547 Ohno H., Matsukura F., Ohno Y. Solid State Commun. 119:2001;281.
15. Dietl T., Ohno H., Matsukura F. Phys. Rev. B. 63:2001;195205.
16. Mattana R., George J.M., Jaffres H., Nguyen Van Dau F., Fert A., Lepine B., Guivarc'h A., Jezequel G. Phys. Rev. Lett. 90:2003;16660.
17. Sousa R.C., Sun J.J., Soares V., Freitas P.P., King K., da Silva M.F., Soares J.C. Appl. Phys. Lett. 73:1998;3288.
18. Lu Y., W. Li X., Xiao G., Altman R.A., Gallagher W.J., Marley A., Roche K., Parkin S.S.P. J. Appl. Phys. 83:1998;6515.
19. Matsukura F., Ohno H., Shen A., Sugawara Y. Phys. Rev. B. 57:1998;R2037.
20. Yu K.M., Walukiewicz W., Wojtowicz T., Lim W.L., Liu X., Sasaki Y., Dobrowolska M., Furdyna J.K. Appl. Phys. Lett. 81:2002;844.
21. Okabayashi J., Mizokawa T., Sarma D.D., Fujimori A., Slupinski T., Oiwa A., Munekata H. Phys. Rev. B. 65:2002;161203(R).
22. Chiba D., Takamura K., Matsukura F., Ohno H. Appl. Phys. Lett. 82:2003;3020.
23. M. Sawicki, F. Matsukura, A. Idziaszek, T. Dietl, G.M. Schott, G. Ruester, G. Karczewski, G. Schmidt, L.W. Molenkamp, condmat/0212511.
24. Jullière M. Phys. Lett. A. 54:1975;225.
25. Ogawa T., Shirai M., Suzuki N., Kitagawa I. J. Magn. Magn. Mater. 196-197:1999;428.
26. E. Kojima, R. Shimano, Y. Hashimoto, S. Katsumoto, Y. Iye, M. Kuwata-Gonokami, condmat/0212276.
27. Shimizu H., Hayashi T., Nishinaga T., Tanaka M. Appl. Phys. Lett. 74:1999;398.