-
2
-
-
0003657056
-
-
New York, NY, Mc-Graw-Hill, AWWA
-
Pontius F.W., Water Quality and Treatment, (New York, NY, Mc-Graw-Hill, AWWA, 1990)
-
(1990)
Water Quality and Treatment
-
-
Pontius, F.W.1
-
3
-
-
0003564089
-
-
Boca Raton, FL, AWWARF and Lewis Publishers
-
Langlais B., Reckhow D.A. and Brink D.R., Ozone in Drinking Water Treatment: Application and Engineering, (Boca Raton, FL, AWWARF and Lewis Publishers, 1991)
-
(1991)
Ozone in Drinking Water Treatment: Application and Engineering
-
-
Langlais, B.1
Reckhow, D.A.2
Brink, D.R.3
-
5
-
-
85039378700
-
-
private communication, IMEC
-
private communication, IMEC
-
-
-
-
7
-
-
0029341817
-
The IMEC clean: A new concept for particle and metal removal on Si surfaces
-
July
-
Meuris M., Mertens P.W., Opdebeeck A, Schmidt H.F., Depas M., Vereecke G., Heyns M.M. and Philipossian A., "The IMEC clean: A new concept for particle and metal removal on Si surfaces", Solid State Technology, p. 109 (July 1995)
-
(1995)
Solid State Technology
, pp. 109
-
-
Meuris, M.1
Mertens, P.W.2
Opdebeeck, A.3
Schmidt, H.F.4
Depas, M.5
Vereecke, G.6
Heyns, M.M.7
Philipossian, A.8
-
9
-
-
0033334804
-
Implementation of the IMEC-clean in advanced CMOS manufacturing
-
oct 11-13, Santa Clara, CA
-
Meuris M., Arnauts S., Cornelissen I., Kenis K., Lux M., Degendt S., Mertens P., Teerlinck I., Vos R., Loewenstein L. and Heyns M.M. "Implementation of the IMEC-clean in advanced CMOS manufacturing", Proc. 1999 IEEE Int. Symp. On Semi. Manuf., p. 157 (oct 11-13, Santa Clara, CA)
-
Proc. 1999 IEEE Int. Symp. On Semi. Manuf.
, pp. 157
-
-
Meuris, M.1
Arnauts, S.2
Cornelissen, I.3
Kenis, K.4
Lux, M.5
Degendt, S.6
Mertens, P.7
Teerlinck, I.8
Vos, R.9
Loewenstein, L.10
Heyns, M.M.11
-
10
-
-
85039376103
-
Balancing Act: EHS puts industry on the high wire
-
Richter A. "Balancing Act: EHS puts industry on the high wire", Semiconductor Magazine, 2 (5) ( 2001)
-
Semiconductor Magazine
, vol.2
, Issue.5
, pp. 2001
-
-
Richter, A.1
-
12
-
-
26644473252
-
Materials compatibility and organic build-up during ozone-based cleaning of semiconductor devices
-
De Smedt F., De Gendt S., Heyns M.M. and Vinckier C. "Materials compatibility and organic build-up during ozone-based cleaning of semiconductor devices", Solid State Phenomena, 76-77: 63-66 (2001)
-
(2001)
Solid State Phenomena
, vol.76-77
, pp. 63-66
-
-
De Smedt, F.1
De Gendt, S.2
Heyns, M.M.3
Vinckier, C.4
-
13
-
-
84929088525
-
The ozone solubility and its decay in aqueous solutions: Crucial issues in ozonated chemistries for semiconductor cleaning
-
De Smedt F., De Gendt S., Heyns M.M. and Vinckier C. "The ozone solubility and its decay in aqueous solutions: crucial issues in ozonated chemistries for semiconductor cleaning", Solid State Phenomena, 76-77: 211-214 (2001)
-
(2001)
Solid State Phenomena
, vol.76-77
, pp. 211-214
-
-
De Smedt, F.1
De Gendt, S.2
Heyns, M.M.3
Vinckier, C.4
-
14
-
-
0022359875
-
Decomposition of Ozone in Water in the Presence of Organic Solutes Acting as Promoters and Inhibitors of Radical Chain Reactions
-
Staehelin J. and Hoigne J. "Decomposition of Ozone in Water in the Presence of Organic Solutes Acting as Promoters and Inhibitors of Radical Chain Reactions", Environ. Sci. Technol., 19: 1206-1213 (1985)
-
(1985)
Environ. Sci. Technol.
, vol.19
, pp. 1206-1213
-
-
Staehelin, J.1
Hoigne, J.2
-
15
-
-
0021837684
-
Rate constants of reactions of ozone with organic and inorganic compounds in water. III
-
Hoigné J., Bader H., Haag W.R. and Staehelin J. "Rate constants of reactions of ozone with organic and inorganic compounds in water. III", Water Res., 19 (8): 993-1004 (1985)
-
(1985)
Water Res.
, vol.19
, Issue.8
, pp. 993-1004
-
-
Hoigné, J.1
Bader, H.2
Haag, W.R.3
Staehelin, J.4
-
16
-
-
0023223483
-
Ozone decomposition in water: Kinetic study
-
Sotelo J.L., Beltran F.J., Benitez F.J. and Beltran-Heredia J. "Ozone decomposition in water: Kinetic study", Ind. Eng. Chem. Res., 26: 39-43 (1987)
-
(1987)
Ind. Eng. Chem. Res.
, vol.26
, pp. 39-43
-
-
Sotelo, J.L.1
Beltran, F.J.2
Benitez, F.J.3
Beltran-Heredia, J.4
-
17
-
-
0038548746
-
Applications of ozone in semiconductor cleaning processes: The solubility issue
-
in press
-
De Smedt F., De Gendt S., Heyns M.M. and Vinckier C. "Applications of ozone in semiconductor cleaning processes: the solubility issue", J. Electrochem. Soc., 149, in press (2001)
-
(2001)
J. Electrochem. Soc.
, vol.149
-
-
De Smedt, F.1
De Gendt, S.2
Heyns, M.M.3
Vinckier, C.4
-
18
-
-
0038548744
-
Evaluation of ozonated water spray for resist cleaning applications
-
De Gendt S., Lux M., Claes M., Van Hoeymissen J., Conard T., Worth W., Lagrange S., Bergman E., Jassal A.S., Mertens P.W. and Heyns M.M. "Evaluation of ozonated water spray for resist cleaning applications", Cleaning Technology in Semiconductor Device Manufacturing VI (Proc.) (2000)
-
(2000)
Cleaning Technology in Semiconductor Device Manufacturing VI (Proc.)
-
-
De Gendt, S.1
Lux, M.2
Claes, M.3
Van Hoeymissen, J.4
Conard, T.5
Worth, W.6
Lagrange, S.7
Bergman, E.8
Jassal, A.S.9
Mertens, P.W.10
Heyns, M.M.11
-
19
-
-
0000821072
-
Native Oxide Growth and Organic Impurity Removal on Si Surface with Ozone Injected Ultrapure Water
-
Ohmi T., IsagawaT., Kogure M. and Imaoka T. "Native Oxide Growth and Organic Impurity Removal on Si Surface with Ozone Injected Ultrapure Water", J. Electrochem. Soc., 140 (3): 804-810 (1993)
-
(1993)
J. Electrochem. Soc.
, vol.140
, Issue.3
, pp. 804-810
-
-
Ohmi, T.1
Isagawa, T.2
Kogure, M.3
Imaoka, T.4
-
20
-
-
85039366038
-
Breakdown and instability of 3 nm gate oxide
-
Charleston, South Carolina, USA, Dec. 7-9
-
Depas M., Vermeire B. and Heyns M.M. "Breakdown and instability of 3 nm gate oxide", 26th IEEE Semicond. Interf. Spec. Conf. (Charleston, South Carolina, USA, Dec. 7-9 1995)
-
(1995)
26th IEEE Semicond. Interf. Spec. Conf.
-
-
Depas, M.1
Vermeire, B.2
Heyns, M.M.3
-
21
-
-
0032635198
-
A wet chemical method for the determination of thickness of SiO2-layers below the nanometer level
-
De Smedt F., Stevens G., De Gendt S., Arnauts S., Meuris M., Heyns M.M. and Vinckier C. "A wet chemical method for the determination of thickness of SiO2-layers below the nanometer level", J. Electrochem. Soc., 146 (5): 1873-1878 (1999)
-
(1999)
J. Electrochem. Soc.
, vol.146
, Issue.5
, pp. 1873-1878
-
-
De Smedt, F.1
Stevens, G.2
De Gendt, S.3
Arnauts, S.4
Meuris, M.5
Heyns, M.M.6
Vinckier, C.7
-
22
-
-
0033872958
-
A mechanism for the silicon dioxide growth by ozonated solutions
-
De Smedt F., De Gendt S., Cornelissen I., Heyns M.M. and Vinckier C. "A mechanism for the silicon dioxide growth by ozonated solutions", J. Electrochem. Soc., 147 (3): 1124-1129 (2000)
-
(2000)
J. Electrochem. Soc.
, vol.147
, Issue.3
, pp. 1124-1129
-
-
De Smedt, F.1
De Gendt, S.2
Cornelissen, I.3
Heyns, M.M.4
Vinckier, C.5
-
23
-
-
0031222777
-
The hydrophilization of process wafers in dilute hydrogen peroxide solutions and ozonated deionized water and its effects on defects and gate oxide integrity
-
Park J. "The hydrophilization of process wafers in dilute hydrogen peroxide solutions and ozonated deionized water and its effects on defects and gate oxide integrity", Jpn. J. Appl. Phys., 36 (9A): 5416-5420 (1997)
-
(1997)
Jpn. J. Appl. Phys.
, vol.36
, Issue.9 A
, pp. 5416-5420
-
-
Park, J.1
-
24
-
-
1642621158
-
General relationship for the thermal oxidation of silicon
-
Deal B.E. and Grove A.S. "General relationship for the thermal oxidation of silicon", J. Appl. Phys., 36 (12): 3770-3778 (1965)
-
(1965)
J. Appl. Phys.
, vol.36
, Issue.12
, pp. 3770-3778
-
-
Deal, B.E.1
Grove, A.S.2
-
25
-
-
0005761335
-
Theory of the oxidation of metals
-
Cabrera N. and Mott N.F. "Theory of the oxidation of metals", Rep. Progr. Phys., 163-184, (1948)
-
(1948)
Rep. Progr. Phys.
, pp. 163-184
-
-
Cabrera, N.1
Mott, N.F.2
-
27
-
-
0031636056
-
A novel resist and post-etch residue removal process using ozonated chemistry
-
De Gendt S., Snee P., Cornelissen I., Lux M., Vos R., Mertens P.W., Knotter D.M. and Heyns M.M. "A novel resist and post-etch residue removal process using ozonated chemistry", 1998 Symposium on VLSI Technology Digest of Technical Papers, p.168 (1998)
-
(1998)
1998 Symposium on VLSI Technology Digest of Technical Papers
, pp. 168
-
-
De Gendt, S.1
Snee, P.2
Cornelissen, I.3
Lux, M.4
Vos, R.5
Mertens, P.W.6
Knotter, D.M.7
Heyns, M.M.8
-
28
-
-
26644473478
-
-
Boca Raton, FL, 62nd Ed.,CRC Press Inc.
-
CRC Handbook of Chem. Phys., (Boca Raton, FL, 62nd Ed.,CRC Press Inc., p. D135-138, 1981)
-
(1981)
CRC Handbook of Chem. Phys.
-
-
-
29
-
-
0027886911
-
Ozonized ultrapure water treatment of organic contamination on Si-wafer surface
-
Kogure M., Isagawa T., Futatsuki T., Yonekawa N. and Ohmi T. "Ozonized ultrapure water treatment of organic contamination on Si-wafer surface", Proc. Int. Environ. Sci., 39: 380-385 (1993)
-
(1993)
Proc. Int. Environ. Sci.
, vol.39
, pp. 380-385
-
-
Kogure, M.1
Isagawa, T.2
Futatsuki, T.3
Yonekawa, N.4
Ohmi, T.5
-
30
-
-
0031119010
-
Megasonic Excited ozonized water for the cleaning of silicon surfaces
-
Ojima S., Kubo K., Kato M., Toda M. and Ohmi T. "Megasonic Excited ozonized water for the cleaning of silicon surfaces", J. Electrochem. Soc., 144 (4): 1482-1487 (1997)
-
(1997)
J. Electrochem. Soc.
, vol.144
, Issue.4
, pp. 1482-1487
-
-
Ojima, S.1
Kubo, K.2
Kato, M.3
Toda, M.4
Ohmi, T.5
-
31
-
-
26644468664
-
Efficiency of ozonated di water in removing organic contamination
-
Pennington, USA, J. Ruzyllo, R. Novak, Electrochem. Soc.
-
Kenens C., De Gendt S., Knotter D.M., Loewenstein L.M., Meuris M., Vandervorst W. and Heyns M.M. "Efficiency of ozonated DI water in removing organic contamination", Proc. of the fifth symposium in Cleaning Technology in Semiconductor Device Manufacturing, (Pennington, USA, J. Ruzyllo, R. Novak, Electrochem. Soc., 1997)
-
(1997)
Proc. of the Fifth Symposium in Cleaning Technology in Semiconductor Device Manufacturing
-
-
Kenens, C.1
De Gendt, S.2
Knotter, D.M.3
Loewenstein, L.M.4
Meuris, M.5
Vandervorst, W.6
Heyns, M.M.7
-
32
-
-
0032761782
-
A novel resist and post-etch residue removal process using ozonated chemistry
-
De Gendt S., Snee P., Cornelissen I., Lux M., Vos R., Mertens P.W., Knotter D.M., Meuris M. and Heyns M.M. "A novel resist and post-etch residue removal process using ozonated chemistry", Solid State Phenomena, 65-66: 165-168 (1999)
-
(1999)
Solid State Phenomena
, vol.65-66
, pp. 165-168
-
-
De Gendt, S.1
Snee, P.2
Cornelissen, I.3
Lux, M.4
Vos, R.5
Mertens, P.W.6
Knotter, D.M.7
Meuris, M.8
Heyns, M.M.9
-
33
-
-
85039381451
-
-
UES Software Inc., Dorchester, U.K.
-
FACSIMILE for Windows V3.0, UES Software Inc., Dorchester, U.K.
-
FACSIMILE for Windows V3.0
-
-
-
34
-
-
3042705388
-
Determination of photoresist degradation products in O3/DI processing
-
Vankerckhoven H., De Smedt F., Van Herp B., Claes M., De Gendt S., Heyns M.M.and Vinckier C. "Determination of photoresist degradation products in O3/DI processing", Solid State Phenomena, 76-77: 207-210 (2001)
-
(2001)
Solid State Phenomena
, vol.76-77
, pp. 207-210
-
-
Vankerckhoven, H.1
De Smedt, F.2
Van Herp, B.3
Claes, M.4
De Gendt, S.5
Heyns, M.M.6
Vinckier, C.7
-
35
-
-
26644457941
-
Fundamentals of wafer rinse processes and the interactions with water conservation and recycling in semiconductor manufacturing plants
-
Shadman F., Seif D. and Peterson T. "Fundamentals of wafer rinse processes and the interactions with water conservation and recycling in semiconductor manufacturing plants", Solid State Phenomena, 76-77, 189-190 (2001)
-
(2001)
Solid State Phenomena
, vol.76-77
, pp. 189-190
-
-
Shadman, F.1
Seif, D.2
Peterson, T.3
|