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Volumn 36, Issue 9 A, 1997, Pages 5416-5420

The hydrophilization of process wafers in dilute hydrogen peroxide solutions and ozonated deionized water and its effects on defects and gate oxide integrity

Author keywords

Breakdown field strength; Defects; Dilute H2O2 solutions; HF last wet cleaning; Ozonated DI water; Water marks

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); HYDROFLUORIC ACID; HYDROGEN PEROXIDE; MOSFET DEVICES; SURFACE CLEANING;

EID: 0031222777     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.5416     Document Type: Article
Times cited : (7)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.