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Volumn 36, Issue 9 A, 1997, Pages 5416-5420
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The hydrophilization of process wafers in dilute hydrogen peroxide solutions and ozonated deionized water and its effects on defects and gate oxide integrity
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Author keywords
Breakdown field strength; Defects; Dilute H2O2 solutions; HF last wet cleaning; Ozonated DI water; Water marks
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Indexed keywords
CRYSTAL DEFECTS;
ELECTRIC BREAKDOWN OF SOLIDS;
GATES (TRANSISTOR);
HYDROFLUORIC ACID;
HYDROGEN PEROXIDE;
MOSFET DEVICES;
SURFACE CLEANING;
BREAKDOWN FIELD STRENGTH;
OZONATED DEIONIZED WATER;
WATER MARKS;
SEMICONDUCTOR DEVICE MANUFACTURE;
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EID: 0031222777
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.36.5416 Document Type: Article |
Times cited : (7)
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References (14)
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