Processing and recombination lifetime characterization of silicon microstrip detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 485, Issue 1-2, 2002, Pages 159-165

  Harkonen J ^a   Tuominen, E ^a   Lassila Perini, K ^a   Palokangas, M ^b   Yli Koski, M ^b   Ovchinnikov, V ^b   Heikkila P ^b   Palmu, L ^c   Kallijarvi S ^c  

^a CERN   (Switzerland)

^b AALTO UNIVERSITY   (Finland)

^c UNIVERSITY OF OULU   (Finland)

Author keywords

Lifetime; Photoconductivity decay; Strip detector

Indexed keywords

CORRELATION METHODS; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; CURRENT DENSITY; ELECTRONS; LASER PULSES; LEAKAGE CURRENTS; MICROSTRIP DEVICES; MICROWAVES; PARTICLE DETECTORS; PHOTOCONDUCTIVITY;

PHOTOCONDUCTIVITY DECAY; SILICON MICROSTRIP DETECTORS;

SEMICONDUCTING SILICON;

EID: 0043130075     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(02)00548-X     Document Type: Conference Paper

References (11)