Current trends in silicon defect technology

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 72, Issue 2, 2000, Pages 93-98

  Bullis, W Murray ^a  

^a Semiconduct Equip and Mat Intl   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH; DEGRADATION; DISLOCATIONS (CRYSTALS); HIGH TEMPERATURE TESTING; HYDROGEN; OXYGEN; STACKING FAULTS; THERMAL GRADIENTS; THERMAL STRESS;

CRYSTAL ORIGINATED PITS; EPITAXIAL DEPOSITION; SILICON DEFECT TECHNOLOGY; SILICON TRANSISTOR;

SILICON WAFERS;

EID: 0343457938     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00509-7     Document Type: Article

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