Formation of deep thermal donors in heat-treated Czochralski silicon

Applied Physics Letters

Volumn 68, Issue 17, 1996, Pages 2375-2377

  Emtsev, V V ^a   Oganesyan, G A ^a   Schmalz, K ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1842851433     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116138     Document Type: Article

References (8)

1. G. Pensl, M. Schulz, K. Hölzlein, W. Bergholz, and J. L. Hutchinson, Appl. Phys. A INS 48, 49 (1989).
2. B. A. Andreev, V. G. Golubev, V. V. Emtsev, G. I. Kropotov, G. A. Oganesyan, and K. Schmalz, Fiz. Tekh. Poluprovodn. 27, 567 (1993) [Sov. Phys. Semicond. 27, 315 (1993)].
3. H. J. Stein, Radiation Effects in Semiconductors, edited by J. W. Corbett and G. D. Watkins (Gordon and Breach, London, 1971), pp. 125-139.
4. V. S. Vavilov, E. F. Uvarov, and M. V. Chukichev, Fiz. Tekh. Poluprovodn. 3, 1838 (1969).
5. V. V. Emtsev, G. A. Oganesyan, and K. Schmalz, Solid State Phenomena (Scitec Publications, 1996), Vol. 47-48, pp. 259-265.
6. A. Bourret, Mater. Res. Soc. Symp. Proc. 59, 223 (1986).
7. A. R. Peaker and S. Guimaries, Properties of Silicon, EMIS Datareview Ser. No. 4 (INSPEC, 1988), pp. 221-224.
8. L. Jeyanathan, E. C. Lightowlers, V. Higgs, and G. Davies, Mater. Sci. Forum 143-147, 1499 (1994).