Application of the narrow spectral range InAs-FPA-based IR camera for the investigation of the interface voids in silicon wafer bonding

Journal of Crystal Growth

Volumn 210, Issue 1, 2000, Pages 351-355

  Vainer, B G ^a   Kamaev, G N ^a   Kurishev, G L ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BUBBLES (IN FLUIDS); CAMERAS; CRYSTAL DEFECTS; INSPECTION; LIGHT REFLECTION; LIGHT TRANSMISSION; QUALITY CONTROL; SEMICONDUCTING INDIUM COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; THERMOGRAPHY (IMAGING);

FOCAL PLANE ARRAY (FPA); INDIUM ARSENIDE;

SILICON WAFERS;

EID: 0033873517     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00709-5     Document Type: Article

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